X-RAY CHANNELING TECHNIQUE USING ANOMALOUS TRANSMISSION AND ITS APPLICATION TO SI MICRO-DEFECTS INDUCED BY HEAT TREATMENTKISHINO S.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 6; PP. 727-736; BIBL. 15 REF.Article

ENHANCED SENSITIVITY OF ANOMALOUSLY TRANSMITTED INTENSITY TO LATTICE DEFECTS IN ASYMMETRIC BRAGG-CASES DIFFRACTION OF X-RAYS.KISHINO S.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 4; PP. 587-593; BIBL. 16 REF.Article

ELECTROLUMINESCENCE OBSERVATION AND X-RAY TOPOGRAPHIC STUDY OF A NITROGEN-DOPED GAP-LED.FUNAKOSHI K; KISHINO S.1976; J.APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3747-3748; BIBL. 7 REF.Article

SCREW-TYPE DISLOCATIONS DUE TO LATTICE MISMATCH IN GAP:N/GAP EPITAXY.KISHINO S; OGIRIMA M.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 6; PP. 1239-1251; BIBL. 14 REF.Article

A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL: A NEW DOUBLE PREANNEALING TECHNIQUENAGASAWA K; MATSUSHITA Y; KISHINO S et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 622-624; BIBL. 9 REF.Article

CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON CRYSTALSKISHINO S; MATSUSHITA Y; KANAMORI M et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 213-215; BIBL. 12 REF.Article

LATTICE MISMATCH AND CRYSTAL SYSTEM IN EPITAXIAL GARNET FILMS.ISOMAE S; KISHINO S; TAKAHASHI M et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 4; PP. 253-258; BIBL. 15 REF.Article

LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON WAFERS BY THE USE OF A TWO-STEP ANNEALINGYAMAMOTO K; KISHINO S; MATSUSHITA Y et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 3; PP. 195-197; BIBL. 9 REF.Article

X-RAY TOPOGRAPHIC STUDY OF LATTICE DEFECTS RELATED WITH DEGRADATION OF GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE LASERS.KISHINO S; NAKASHIMA H; ITO R et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 303-307; BIBL. 10 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT X-RAY BEAMS.KISHINO S; IIDA S; AOKI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3138-3140; BIBL. 17 REF.Article

THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON: NUCLEATION AND GROWTH BEHAVIORKISHINO S; MATSUSHITA Y; KANAMORI M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 1-12; BIBL. 43 REF.Article

GROWTH BEHAVIOR OF OXIDATION STACKING FAULTS AND MICRODEFECTS IN SILICON DURING HIGH-TEMPERATURE ANNEALING.KISHINO S; ISOMAE S; TAMURA M et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3255-3258; BIBL. 28 REF.Article

DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS.ITO R; NAKASHIMA H; KISHINO S et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 551-556; BIBL. 18 REF.Article

X-RAY TOPOGRAPHIC STUDY OF LATTICE DEFECTS IN A GADOLINIUM GALLIUM GARNET SINGLE CRYSTAL.KISHINO S; ISOMAE S; TAKAGI K et al.1974; MATER. RES. BULL.; U.S.A.; DA. 1974; VOL. 9; NO 10; PP. 1301-1311; BIBL. 9 REF.Article

SUPPRESSION OF OXIDATION-STACKING FAULT GENERATION BY PREANNEALING.KISHINO S; ISOMAE S; TAMURA M et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 1-3; BIBL. 18 REF.Article

X-RAY TOPOGRAPHIC OBSERVATION OF DARK-LINE DEFECTS IN GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE WAFERS.KISHINO S; NAKASHIMA H; CHINONE N et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 2; PP. 98-100; BIBL. 17 REF.Article

PHOTOLUMINESCENCE ANALYSIS OF ANNEALED SILICON CRYSTALSTAJIMA M; KISHINO S; KANAMORI M et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2247-2254; BIBL. 45 REF.Article

HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON CRYSTALSKISHINO S; KANAMORI M; YOSHIHIRO N et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8240-8243; BIBL. 13 REF.Article

GROWTH AND PROPAGATION MECHANISM OF <110>-ORIENTED DARK-LINE DEFECTS IN GAAS-GA_1-XAL_XAS DOUBLE HETEROSTRUCTURE CRYSTALS.NAKASHIMA H; KISHINO S; CHINONE N et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 2771-2775; BIBL. 26 REF.Article

LATTICE-PARAMETER MEASUREMENT TECHNIQUE FOR SINGLE CRYSTALS USING TWO LATTICE PLANES, AND ITS APPLICATION TO GD₃GA₅O₁₂ SINGLE CRYSTALS.ISOMAE S; KISHINO S; TAKAGI K et al.1976; J. APPL. CRYSTALLOGR.; DENM.; DA. 1976; VOL. 9; NO 4; PP. 342-346; BIBL. 15 REF.Article

X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA_1-XAL_XAS DOUBLE HETEROSTRUCTURE WAFERS.KISHINO S; NAKASHIMA H; ITO R et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 207-209; BIBL. 9 REF.Article

EFFET DE LA MAYONNAISE SUR LA TENEUR EN CHOLESTEROL DU SERUM HUMAIN. II. EFFET SUR LES PATIENTS PRESENTANT DE L'HYPERTENSION ET DE L'ARTERIOSCLEROSEKAMEGI K; KANAZAWA H; YAMAMOTO H et al.1973; JAP. J. NUTRIT.; JAP.; DA. 1973; VOL. 31; NO 6; PP. 221-229; ABS. ANGL.; BIBL. 11REF.Article

Isothermal capacitance transient spectroscopy of electron and hole emissions from interface states in metal-oxide-semiconductor transistorsYOSHIDA, H; NIU, H; KISHINO, S et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4457-4461, issn 0021-8979Article

Optimizing gettering conditions for VLSI chips using simple yield modelKISHINO, S; YOSHIDA, H; NIU, H et al.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 3, pp 251-257, issn 0894-6507Article

ICTS of MOS interface states enhanced by gold diffusionYOSHIDA, H; NIU, H; KISHINO, S et al.Japanese journal of applied physics. 1991, Vol 30, Num 7B, pp L1293-L1295, issn 0021-4922, 2Article